Sunday, June 7, 2009

At Hynix ready the world's first 54-nanometer mobile memory density of 1 Gbit DDR2

At the end of last year, Hynix announced the release of the world's first memory chip density Mobile DRAM 2 Gbit, built on the norms of 54 nm.

While continuing to develop dynamic random-access memory for mobile devices, Hynix Semiconductor specialists developed the world's first DDR2 DRAM chip 1 Gb densities, calculated on the production of the same rules. Serial Number of that memory of the company is planning to start the second half of the year.

Maximum frequency, which can run the new memory is 1066 MHz. If using 32-bit bus of its carrying capacity is 4.26 GB / s in single-configuration, and 8.52 GB / s - in two.

According to Hynix, the new chips consume half the electricity than the previous generation of mobile memory (DDR) and 30% less than conventional memory DDR2 DRAM.

Scope Hynix Mobile DRAM identified mobile device with Internet connection (Mobile Internet Device, MID), smartphones and notebook upper price range.