Company Hynix Semiconductor announced the development of memory chips DRAM DDR3 density of 1 Gbit, calculated on the production of 40 nm standards.
The maximum speed of data exchange provided by the new chips is equal to 2133 Mbps. Chips functional in a wide range of voltage. Serial production of products will begin in the third quarter of 2009, the company promises.
Compared with similar products manufactured by the rules of 50 nm, the overall memory performance has improved by more than 50%. Such a result is obtained on only through the reduction of the structures in the transition to a more subtle rules - the company applied the three-dimensional transistors, which differ reduced current leakage and low power consumption.
Hynix expects to use the memory manufactured on 40 nm standards, in memory DDR3. In addition, the company plans to apply new technology for the production of memory for mobile devices and graphics accelerators.